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FQA28N50F

Part No FQA28N50F
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 28.4A TO-3P
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 28.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 5600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 14.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 131607-FQA28N50F
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian FQA28N50F CAD Model

Description

The FQA28N50F is an N-Channel MOSFET designed for high-voltage, high-current applications. Manufactured by Fairchild/ON Semiconductor.

  • Package: Tube/Rail
  • Mounting Type: Through-Hole
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 28.4A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge (Max): 140nC @ 10V
  • Rds On (Max): 160 mOhm @ 14.2A, 10V
  • Supply and Demand: Balanced
  • Applications: Industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.1617 $51.6170
24+ $4.2353 $101.6472
37+ $4.1029 $151.8073
51+ $3.9706 $202.5006
66+ $3.8382 $253.3212
88+ $3.4412 $302.8256
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,150 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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