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Same model may have multiple batches, images only for reference.
FQA90N15_F109 Real Image
Same model may have multiple batches, images only for reference.

FQA90N15_F109

Part No FQA90N15_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 90A TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 285nC @ 10V
Max Input Capacitance 8700pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1039575-FQA90N15_F109
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQA90N15_F109 CAD Model

Description

The FQA90N15_F109 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Type: N-channel MOSFET
  • Power Dissipation: 375W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 90A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Rds On @ Id, Vgs (Max): 18 mOhm @ 45A, 10V
  • Temperature Range: -55°C to 175°C
  • Package: TO-3PN

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