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FQB12N60C

Part No FQB12N60C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 2290pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 225W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040334-FQB12N60C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB12N60C CAD Model

Description

The FQB12N60C from Fairchild/ON Semiconductor is an obsolete (EOL) MOSFET with a maximum power dissipation of 3.13W (Ta), 225W (Tc). It has a drive voltage of 10V and drain-source breakdown voltage of 600V.

  • Case/Package: D2PAK (TO-263AB)
  • Maximum Gate-Source Voltage: ±30V
  • Max Rds On at Id,Vgs: 650 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8734 $65.5690
80+ $1.5373 $122.9840
120+ $1.4888 $178.6560
165+ $1.4414 $237.8310
210+ $1.3929 $292.5090
280+ $1.2486 $349.6080
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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