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Same model may have multiple batches, images only for reference.
FQB2N80TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB2N80TM

Part No FQB2N80TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2.4A D2PAK / Trans MOSFET N-CH 800V 2.4A 3-Pin(2+Tab) D2PAK T/R
Datasheet
FQB2N80TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 550pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 85W (Tc)
Rds On (Maximum) @ Id, Vgs 6.3 Ohm @ 900mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 774715-FQB2N80TM
Popularity Medium
Supply and Demand Status Limited
Family Name FQB2N80
Introduction Date November 02, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQB2N80TM CAD Model

Description

The Fairchild/ON Semiconductor QFET series MOSFET is designed for use in discrete semiconductor products.

  • Current Rating: 2.4A (Tc)
  • Drain-Source Voltage: 800V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge: 15nC @ 10V
  • Input Capacitance: 550pF @ 25V
  • Power Dissipation: 3.13W (Ta), 85W (Tc)
  • Maximum Rds On: 6.3 Ohm @ 900mA, 10V
  • Mounting Type: SMD
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Status: Obsolete (EOL), Limited Supply and Demand

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