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FQB33N10TM

Part No FQB33N10TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 33A D2PAK
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 127W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 16.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 134423-FQB33N10TM
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Audio, Motor Drive & Control, Industrial
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB33N10TM CAD Model

Description

The Fairchild/ON Semiconductor FQB33N10TM is an N-channel MOSFET commonly used in audio, motor drive, power management, and industrial applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 33A @ 25°C
  • Maximum Rds On: 52 mOhm @ 16.5A, 10V Vgs
  • Maximum Gate-Source Voltage: ±25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 1500pF @ 25V
  • Maximum Gate Charge: 51nC @ 10V
  • Package Type: D2PAK (TO-263AB)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Power Dissipation: 3.75W (Ta), 127W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $17.4470 $69.7880
9+ $14.3155 $128.8395
13+ $13.8682 $180.2866
18+ $13.4208 $241.5744
23+ $12.9734 $298.3882
30+ $11.6313 $348.9390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,200 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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