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Same model may have multiple batches, images only for reference.
FQB3N90TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB3N90TM

Part No FQB3N90TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 3.6A D2PAK / Trans MOSFET N-CH 900V 3.6A 3-Pin(2+Tab) D2PAK T/R
Datasheet
FQB3N90TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 900V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 910pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 130W (Tc)
Rds On (Maximum) @ Id, Vgs 4.25 Ohm @ 1.8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 774719-FQB3N90TM
Popularity Medium
Supply and Demand Status Limited
Family Name FQB3N90
Introduction Date October 12, 2000
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQB3N90TM CAD Model

Description

The Fairchild/ON Semiconductor FQB3N90TM is a MOSFET designed by Fairchild/ON Semiconductor.

  • Series: QFET
  • Continuous Drain Current: 3.6A (Tc)
  • Voltage Breakdown: 900V
  • Gate Charge: 26nC @ 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Category: Discrete Semiconductor Products
  • Status: Limited Supply and Demand
  • EOL Date: Obsolete/End of Life

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