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Same model may have multiple batches, images only for reference.
UPA1815GR-9JG-E1-A NEC
Same model may have multiple batches, images only for reference.

UPA1815GR-9JG-E1-A

Part No UPA1815GR-9JG-E1-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8-TSSOP / P-Channel 20 V 7A (Ta) Surface Mount 8-TSSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Renesas Electronics America Inc
Packaging Reel - TR
Product Status Last Time Buy
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7A
Rds On (Max) @ Id, Vgs 15mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 10 V
Mounting Surface Mount
Supplier Device Package 8-TSSOP
Case / Package 8-TSSOP (0.173", 4.40mm Width)
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1324111-UPA1815GR-9JG-E1-A
Ultra Librarian 3D Model Ultra Librarian UPA1815GR-9JG-E1-A CAD Model

Description

The Renesas Electronics America Inc UPA1815GR-9JG-E1-A is a P-channel MOSFET transistor with a drain to source voltage of 20 V and a continuous drain current of 7A.

  • Drain to Source Voltage: 20 V
  • Continuous Drain Current: 7A
  • Maximum On-Resistance: 15mOhm @ 3.5A and 4.5V
  • Gate Charge (Qg): 25 nC @ 4 V
  • Input Capacitance (Ciss): 3000 pF @ 10 V
  • Package: 8-TSSOP package
  • Technology: Suitable for surface mount technology
  • Application: Ideal for use in various applications such as power management, load switching, and battery protection.

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