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FQB4N20LTM

Part No FQB4N20LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.8A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 5.2nC @ 5V
Max Input Capacitance 310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.13W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 1.35 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039640-FQB4N20LTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB4N20LTM CAD Model

Description

The Fairchild/ON Semiconductor FQB4N20LTM is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation: 3.13W (Ta), 45W (Tc)
  • Drive Voltage for Maximum Rds On: up to 5V
  • Drive Voltage for Minimum Rds On: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: D2PAK (TO-263AB)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 3.8A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 5.2nC @ 5V
  • Maximum Input Capacitance: 310pF @ 25V
  • Supply and Demand Status: Balanced
  • Sold in reels of: 1k pcs
  • Commonly used in: discrete semiconductor products

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