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Same model may have multiple batches, images only for reference.
FQB55N06TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB55N06TM

Part No FQB55N06TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 55A D2PAK
Datasheet
FQB55N06TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 133W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 27.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039646-FQB55N06TM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQB55N06TM CAD Model

Description

The Fairchild/ON Semiconductor 1039646-FQB55N06TM is an N-Channel MOSFET Technology IC that comes in a D2PAK (TO-263AB) package.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 55A (Tc) @ 25°C
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On: 20 mOhm @ 27.5A, 10V
  • Usage: Discrete Semiconductor Products
  • Popularity: Medium
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Sufficient

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