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FQB5P10TM

Part No FQB5P10TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 4.5A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.75W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 2.25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039655-FQB5P10TM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB5P10TM CAD Model

Description

The Fairchild/ON Semiconductor FQB5P10TM is a P-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 4.5A (Tc) @ 25°C.

  • Maximum Power Dissipation: 3.75W (Ta) and 40W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 1.05 Ohm @ 2.25A, 10V
  • Suitable for: use in power management applications, such as DC-DC converters and motor control
  • Packaging: D2PAK (TO-263AB)
  • Quantity per package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1314 $62.2270
125+ $0.9283 $116.0375
195+ $0.8993 $175.3635
270+ $0.8703 $234.9810
345+ $0.8413 $290.2485
460+ $0.7542 $346.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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