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Same model may have multiple batches, images only for reference.
FQB630TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB630TM

Part No FQB630TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A D2PAK
Datasheet
FQB630TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.13W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039657-FQB630TM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB630TM CAD Model

Description

The Fairchild/ON Semiconductor 1039657-FQB630TM is a MOSFET transistor designed for use in discrete semiconductor products.

  • Polarity: N-channel polarity transistor
  • Maximum Power Dissipation: 3.13W (Ta) and 78W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Rds On: 400 mOhm @ 4.5A, 10V
  • Designed for use in: applications such as power supplies, motor control, and lighting ballasts
  • Supply and Demand Status: Balanced

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