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2SJ551L-E

Part No 2SJ551L-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package DPAK
Continuous Drain Current (ID) 18 A
Drain to Source Voltage (Vdss) 60 V
Lead Free Lead Free
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Packaging Box
Power Dissipation 60 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1224175-2SJ551L-E
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SJ551L-E CAD Model

Description

The 2SJ551L-E is a P-channel MOSFET produced by Renesas Electronics America, primarily designed for use in high-frequency and power management applications. This MOSFET is characterized by its low on-resistance and fast switching speed, making it suitable for efficient power conversion and control in various electronic circuits. It is commonly employed in RF amplifiers, DC-DC converters, and load switching applications.

Applications:

  • DC-DC Converters: Used in power supplies to efficiently convert voltage levels.
  • Load Switching: Employed to switch power to various loads in electronic devices.
  • RF Amplifiers: Utilized in RF amplifier circuits for signal amplification.
  • Power Management Circuits: Integrated into power management systems to control and regulate power distribution.
  • Battery Management Systems: Incorporated into battery charging and discharging circuits.

Features:

  • P-Channel MOSFET: Provides P-channel conductivity for specific circuit requirements.
  • Low On-Resistance (RDS(on)): Reduces power losses and improves overall efficiency.
  • High-Speed Switching: Enables fast switching speeds, crucial for high-frequency operation.
  • Surface Mount Package: Facilitates easy and efficient assembly on printed circuit boards.
  • Low Gate Charge: Minimizes switching losses and improves efficiency.

Benefits:

  • Improved Power Efficiency: Low on-resistance reduces power dissipation, leading to increased efficiency.
  • Compact Design: Small package size allows for integration into space-constrained applications.
  • Enhanced Thermal Performance: Efficient heat dissipation capabilities ensure stable operation.
  • Increased Reliability: Robust design ensures stable performance under various operating conditions.
  • Simplified Circuit Design: Facilitates easier and more efficient circuit design.

Additional Details:

The 2SJ551L-E requires adherence to specified gate-source voltage (VGS) and drain-source voltage (VDS) limits as outlined in the Renesas datasheet. Proper thermal management is crucial, often involving the use of heat sinks or other cooling techniques to maintain optimal operating temperatures. Consulting the Renesas Electronics America datasheet is essential for detailed electrical characteristics, application guidelines, and thermal considerations. Implementing accurate gate drive circuitry is important for achieving maximum switching performance and efficiency. The specific package dimensions and recommended PCB footprint layout can also be found in the datasheet.

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