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Same model may have multiple batches, images only for reference.
FQB6N60CTM Real Image
Same model may have multiple batches, images only for reference.

FQB6N60CTM

Part No FQB6N60CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5.5A D2PAK
Datasheet
FQB6N60CTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 133577-FQB6N60CTM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB6N60CTM CAD Model

Description

The Fairchild/ON Semiconductor FQB6N60CTM is an N-Channel MOSFET with a drain-source breakdown voltage of 600V and continuous drain current of 5.5A (Tc).

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 2 Ohm @ 2.75A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 810pF @ 25V
  • Package: D2PAK (TO-263AB)
  • Temperature Range: -55°C to 150°C (TJ)
  • Suitable for use in various discrete semiconductor products applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7371 $58.9680
195+ $0.6049 $117.9555
300+ $0.5860 $175.8000
410+ $0.5671 $232.5110
530+ $0.5482 $290.5460
710+ $0.4915 $348.9650
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Availability: 6,000 pieces
MOQ: 80 pcs
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