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FQD12N20LTM

Name: FQD12N20LTM
Brand: Fairchild/ON Semiconductor
SKU: 132450
Availability: InStock
Rating: 4.85 (48 reviews)

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Part No	FQD12N20LTM
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 200V 9A DPAK
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	200V
Continuous Drain Current at 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	21nC @ 5V
Max Input Capacitance	1080pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta), 55W (Tc)
Maximum Rds On at Id,Vgs	280 mOhm @ 4.5A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	D-Pak
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	016428-FQD12N20LTM
Popularity	Medium
Supply and Demand Status	Balance
Application Field	Used in Power Management, Lighting, Industrial
Quantity per package	2,500
Ultra Librarian 3D Model	Ultra Librarian FQD12N20LTM CAD Model

Alternative Products

Description

The FQD12N20LTM is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

Drain-Source Breakdown Voltage: 200V
Continuous Drain Current: 9A (Tc) @ 25°C
Gate-Source Threshold Voltage: 2V @ 250μA
Maximum Gate Charge: 21nC @ 5V
Package: D-Pak, TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity: High
Supply and Demand Status: Balanced
Applications: Power management, lighting, and industrial applications.
Package Size: 2,500 units

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
100+	$0.6075	$60.7500
205+	$0.5683	$116.5015
320+	$0.5488	$175.6160
455+	$0.5095	$231.8225
590+	$0.4900	$289.1000
740+	$0.4703	$348.0220

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 30,511 pieces

MOQ: 100 pcs

Order Increment : 1 pcs

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