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FQD12N20TM Real Image FQD12N20TM Real Image
Same model may have multiple batches, images only for reference.
FQD12N20TM Real Image FQD12N20TM Real Image
FQD12N20TM Real Image FQD12N20TM Real Image
Same model may have multiple batches, images only for reference.

FQD12N20TM

Part No FQD12N20TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 910pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 067393-FQD12N20TM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD12N20TM CAD Model

Description

The Fairchild/ON Semiconductor FQD12N20TM is an N-channel MOSFET transistor designed for use in power switching applications.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9A @ 25°C
  • Package: D-Pak
  • Operating Temperature: -55°C to 150°C
  • Maximum Rds On: 280 mOhm @ 4.5A and 10V
  • Status: Active
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3555 $54.2200
90+ $1.1123 $100.1070
140+ $1.0775 $150.8500
195+ $1.0427 $203.3265
250+ $1.0080 $252.0000
335+ $0.9037 $302.7395
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