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Same model may have multiple batches, images only for reference.
FQD17N08LTM Real Image
Same model may have multiple batches, images only for reference.

FQD17N08LTM

Part No FQD17N08LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 12.9A DPAK
Datasheet
FQD17N08LTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 11.5nC @ 5V
Max Input Capacitance 520pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 6.45A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039697-FQD17N08LTM
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD17N08LTM CAD Model

Description

The 1039697-FQD17N08LTM MOSFET is a high-performance N-channel device from Fairchild/ON Semiconductor.

  • Power Dissipation: 2.5W (Ta), 40W (Tc)
  • Drain-Source Breakdown Voltage: 80V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Rds On: 100 mOhm @ 6.45A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 520pF @ 25V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6498 $58.4820
220+ $0.5333 $117.3260
340+ $0.5165 $175.6100
465+ $0.4999 $232.4535
600+ $0.4833 $289.9800
800+ $0.4333 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,664 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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