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Same model may have multiple batches, images only for reference.
FQD18N20V2TF Real Image
Same model may have multiple batches, images only for reference.

FQD18N20V2TF

Part No FQD18N20V2TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 15A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1080pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039701-FQD18N20V2TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD18N20V2TF CAD Model

Description

The Fairchild/ON Semiconductor FQD18N20V2TF MOSFET is an N-channel component with a drain-source breakdown voltage of 200V. Fairchild/ON Semiconductor FQD18N20V2TF is a product by Fairchild/ON Semiconductor.

  • Type: MOSFET
  • Channel: N-channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 15A (Tc) @ 25°C
  • Power Dissipation: 2.5W (Ta), 83W (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Mounting: SMD
  • Maximum Rds On @ Id,Vgs: 140 mOhm @ 7.5A, 10V
  • Category: discrete semiconductor products
  • Popularity: medium

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