The FQD2N50 is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This power MOSFET is designed for high-voltage, high-speed switching applications.

Applications

• Power supplies
• AC-DC converters
• High-voltage inverters
• Power factor correction (PFC) circuits
• Lighting ballasts

Features

• N-Channel MOSFET
• 2A continuous drain current
• 500V drain-source voltage
• Low gate charge
• High speed switching
• Avalanche rated

Benefits

• High voltage operation capability
• Reduced switching losses due to low gate charge
• Efficient operation in high-frequency circuits
• Robust performance under high-voltage conditions
• Simplified thermal management
• Reliable operation

Technical Specifications

The FQD2N50 features a drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 2A. It offers a low gate charge (Qg), contributing to faster switching speeds and reduced switching losses. The avalanche rating provides robust performance under transient voltage conditions. The on-resistance (RDS(on)) is optimized for efficient power conversion. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. It is commonly supplied in a TO-251(IPAK) package. This MOSFET is designed to operate over a wide temperature range. The device is RoHS compliant. The fast switching characteristics result in improved efficiency in power electronic circuits. The high breakdown voltage makes it suitable for applications where high-voltage surges may be present.

The FQD2N50 is a good choice for applications that require high-voltage switching, where efficiency and reliability are crucial. Its features and performance make it a useful component for power electronics.