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Same model may have multiple batches, images only for reference.
FQD30N06LTF Real Image
Same model may have multiple batches, images only for reference.

FQD30N06LTF

Part No FQD30N06LTF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 24A DPAK
Datasheet
FQD30N06LTF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 1040pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Maximum Rds On at Id,Vgs 39 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039733-FQD30N06LTF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD30N06LTF CAD Model

Description

The FQD30N06LTF is an N-channel MOSFET from Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (@ 25°C): 24A
  • Maximum Rds On (@ Id,Vgs): 39 mOhm @ 12A, 10V
  • Power Dissipation: 2.5W (Ta), 44W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge (@ 5V): 20nC
  • Maximum Input Capacitance (@ 25V): 1040pF
  • Package: D-Pak
  • Mounting Technology: SMD (SMT)
  • Product Status: Obsolete (EOL)
  • Popularity: Medium

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