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Same model may have multiple batches, images only for reference.
FQD30N06TF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD30N06TF

Part No FQD30N06TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 22.7A DPAK
Datasheet
FQD30N06TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 22.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 945pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 11.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039734-FQD30N06TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD30N06TF CAD Model

Description

The Fairchild/ON Semiconductor FQD30N06TF is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: FQD30N06TF
  • Channel Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 22.7A (Tc)
  • Rds On @ Id,Vgs: 45 mOhm @ 11.4A, 10V
  • Gate-Source Voltage: ±25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Input Capacitance: 945pF @ 25V
  • Gate Charge: 25nC @ 10V
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Product Status: Obsolete (EOL)
  • Popularity: Medium

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