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DMG1012T-13

Part No DMG1012T-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 630MA SOT523 T&R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.74 nC @ 4.5 V
Vgs (Max) ±6V
Input Capacitance (Ciss) (Max) @ Vds 60.67 pF @ 16 V
FET Feature -
Power Dissipation (Max) 280mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-523
Package / Case SOT-523
Base Product Number DMG1012
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376770-DMG1012T-13
Ultra Librarian 3D Model Ultra Librarian DMG1012T-13 CAD Model

Description

DMG1012T-13 - N-Channel Enhancement Mode MOSFET by Diodes Incorporated

The DMG1012T-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products. This MOSFET is designed to provide efficient power management and signal amplification in a wide array of electronic applications.

Key Features:

  • Low On-Resistance: The DMG1012T-13 features low on-resistance, typically noted as R<sub>DS(on), which ensures minimal power loss and heat generation during operation, enhancing overall efficiency and reliability.
  • Low Gate Threshold Voltage (V<sub>GS(th)): A low gate threshold voltage allows for the MOSFET to be driven at lower voltages, making it suitable for low-voltage applications and logic-level gate drive sources.
  • High-Speed Switching: Designed with fast switching speeds, the DMG1012T-13 is ideal for high-frequency applications, including power supplies, DC-DC converters, and load switches.
  • Surface Mount Package: The device comes in a small SOT-523 package, which is suitable for compact PCB designs and helps to reduce overall board space.
  • Lead-Free and RoHS Compliant: As an environmentally friendly product, the DMG1012T-13 is lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in applications where these regulations are a concern.

Applications:

The versatility of the DMG1012T-13 allows it to be used in a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Circuits
  • Load Switches
  • Portable Electronic Devices

Product Specifications:

The DMG1012T-13 operates with a continuous drain current (I<sub>D) of 350 mA and a maximum drain-source voltage (V<sub>DS) of 20 V. The device's thermal characteristics are designed to handle a maximum junction temperature of 150°C, ensuring stability and performance under varying temperature conditions.

For engineers and designers looking for a reliable and efficient N-Channel MOSFET, the DMG1012T-13 from Diodes Incorporated offers an excellent balance of performance, size, and environmental compliance, making it a smart choice for a wide range of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,030+ $0.0487 $50.1610
2,195+ $0.0456 $100.0920
3,410+ $0.0440 $150.0400
4,880+ $0.0410 $200.0800
6,350+ $0.0394 $250.1900
7,920+ $0.0379 $300.1680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,390 pieces
MOQ: 1030 pcs
Order Increment : 1 pcs
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