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Same model may have multiple batches, images only for reference.
FQD7N10TF
Same model may have multiple batches, images only for reference.

FQD7N10TF

Part No FQD7N10TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Not available to order .
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package DPAK
Continuous Drain Current (ID) 5.8 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 350 mΩ
Element Configuration Single
Fall Time 19 ns
Gate to Source Voltage (Vgs) 25 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 2.5 W
Rise Time 24 ns
RoHS Non-Compliant
Turn-Off Delay Time 13 ns
Win Source Part Number 984114-FQD7N10TF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FQD7N10TF CAD Model

Description

The FQD7N10TF is a transistor designed for use in FETs and MOSFETs-RF manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation: 2.5 W
  • Rise Time: 24 ns
  • Fall Time: 19 ns
  • Package/Case: DPAK
  • Continuous Drain Current (ID): 5.8 A
  • Drain to Source Breakdown Voltage: 100 V
  • Turn-Off Delay Time: 13 ns
  • Drain to Source Resistance: 350 mΩ
  • Gate to Source Voltage (Vgs): 25 V
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • RoHS: Non-Compliant

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