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Same model may have multiple batches, images only for reference.
FQD8P10TF Real Image
Same model may have multiple batches, images only for reference.

FQD8P10TF

Part No FQD8P10TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.6A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 470pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Maximum Rds On at Id,Vgs 530 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039782-FQD8P10TF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian FQD8P10TF CAD Model

Description

The Fairchild/ON Semiconductor FQD8P10TF is a P-channel MOSFET that has a drain-source breakdown voltage of 100V and a continuous drain current of 6.6A @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.6A @ 25°C
  • Status: obsolete(EOL) discrete semiconductor product
  • Mounting: SMD (SMT) technology
  • Supply and Demand Status: sufficient
  • Applications: power management and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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Availability: 4,099 pieces
MOQ: 180 pcs
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