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FQI50N06TU

Part No FQI50N06TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A I2PAK / Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) I2PAK Tube
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1540pF @ 25V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 3.75W (Ta), 120W (Tc)
Rds On (Maximum) @ Id, Vgs 22 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 774745-FQI50N06TU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Family Name FQI50N06
Introduction Date May 01, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FQI50N06TU CAD Model

Description

The FQI50N06TU is a MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Drain Source Voltage: 60V
  • Current-Continuous Drain: 50A (Tc)
  • Power Dissipation: 3.75W (Ta), 120W (Tc)
  • Family: Discrete semiconductor products
  • Alternative Parts: SiHFZ44L, SiHFZ44L-E3, STB55NF06-1, STB55NF06L-1

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