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FQU13N06LTU

Part No FQU13N06LTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 11A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 6.4nC @ 5V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1039981-FQU13N06LTU
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 5,040
Ultra Librarian 3D Model Ultra Librarian FQU13N06LTU CAD Model

Description

The Fairchild/ON Semiconductor FQU13N06LTU is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a maximum power dissipation of 2.5W (Ta), 28W (Tc).

  • Drive Voltage (Max Rds On): 5V
  • Drive Voltage (Min Rds On): 10V
  • Continuous Drain Current: 11A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 6.4nC @ 5V
  • Maximum Input Capacitance: 350pF @ 25V
  • Package: I-Pak
  • Supply and Demand: Sufficient
  • Package Quantity: 5,040 pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,665 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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