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FQI6N25TU

Part No FQI6N25TU
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 992357-FQI6N25TU
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FQI6N25TU CAD Model

Description

The FQI6N25TU is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. This MOSFET is designed for high-efficiency switching applications such as power supplies, DC-DC converters, and motor control. The device features low gate charge, fast switching speeds, and a robust body diode, which contributes to its overall efficiency and reliability in demanding applications.

Applications

  • Power Supplies: Used in switched-mode power supplies (SMPS) for efficient power conversion.
  • DC-DC Converters: Implemented in DC-DC converters to regulate voltage levels in electronic devices.
  • Motor Control: Employed in motor control circuits for efficient motor speed regulation.
  • LED Lighting: Used in LED drivers for efficient and reliable lighting systems.
  • Battery Chargers: Utilized in battery chargers for efficient charging of various battery types.

Features

  • Low Gate Charge (Qg): Reduces switching losses and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation for smaller component sizes.
  • Robust Body Diode: Provides improved reverse recovery performance.
  • Avalanche Rated: Ensures reliability under avalanche conditions.
  • Pb-Free Package: Environmentally friendly and compliant with RoHS standards.

Benefits

  • High Efficiency: Reduces power consumption and heat generation.
  • Improved System Performance: Enables faster switching and higher operating frequencies.
  • Enhanced Reliability: Ensures stable operation under various operating conditions.
  • Reduced System Cost: Smaller component sizes and simplified designs contribute to cost savings.
  • Environmentally Friendly: Compliant with environmental regulations.

Technical Specifications

  • Drain-Source Voltage (VDSS): 250V
  • Gate-Source Voltage (VGSS): ±30V
  • Continuous Drain Current (ID): 6A
  • Pulsed Drain Current (IDM): 18A
  • On-Resistance (RDS(on)): 0.85 Ohms (typical)
  • Gate Charge (Qg): 8.5 nC (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-251 (IPAK)

The FQI6N25TU MOSFET offers a combination of high efficiency, fast switching, and robust design, making it well-suited for a wide range of power electronics applications. Its low gate charge and fast switching speed contribute to reduced power losses and improved system performance. The TO-251 package provides adequate heat dissipation for the specified current levels, making it a reliable component for various electronic systems.

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