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Same model may have multiple batches, images only for reference.
FQP13N50 Real Image
Same model may have multiple batches, images only for reference.

FQP13N50

Part No FQP13N50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12.5A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 6.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 016449-FQP13N50
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Lighting
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP13N50 CAD Model

Description

The Fairchild/ON Semiconductor FQP13N50 is a N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 12.5A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-220AB (TO-220-3)
  • Maximum Rds On: 430 mOhm @ 6.25A, 10V
  • Power Dissipation: 170W (Tc)
  • Mounting: Through Hole
  • Packaging: Tube/Rail

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