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Same model may have multiple batches, images only for reference.
FQP19N10L Real Image
Same model may have multiple batches, images only for reference.

FQP19N10L

Part No FQP19N10L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 19A TO-220
Datasheet
FQP19N10L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 18nC @ 5V
Max Input Capacitance 870pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039830-FQP19N10L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQP19N10L CAD Model

Description

The Fairchild/ON Semiconductor FQP19N10L is an N-channel MOSFET that comes in a TO-220-3 package.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 19A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 9.5A, 10V
  • Product Status: Obsolete (EOL)
  • Supply: Sufficient
  • Package: Tube/Rail

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