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FQP27P06

Part No FQP27P06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 27A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 091894-FQP27P06
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Consumer Electronics, Portable Devices, Industrial
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP27P06 CAD Model

Description

The Fairchild/ON Semiconductor FQP27P06 MOSFET is a P-Channel transistor designed for use in power management, consumer electronics, portable devices, and industrial applications.

  • Maximum Power Dissipation: 120W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 27A (Tc)
  • Maximum Rds On: 70 mOhm @ 13.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 43nC @ 10V
  • Maximum Input Capacitance: 1400pF @ 25V
  • Package: TO-220-3
  • Packaging: Tube/Rail
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6007 $56.0245
80+ $1.3134 $105.0720
120+ $1.2724 $152.6880
165+ $1.2314 $203.1810
215+ $1.1903 $255.9145
285+ $1.0672 $304.1520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,276 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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