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Same model may have multiple batches, images only for reference.
FQP3N80C Real Image
Same model may have multiple batches, images only for reference.

FQP3N80C

Part No FQP3N80C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3A TO-220
Datasheet
FQP3N80C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 16.5nC @ 10V
Max Input Capacitance 705pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 4.8 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 016455-FQP3N80C
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP3N80C CAD Model

Description

The Fairchild/ON Semiconductor FQP3N80C is an N-channel MOSFET in the Discrete Semiconductor Products category.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 3A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 16.5nC @ 10V
  • Package: TO-220AB
  • Operating Temperature: -55°C to 150°C
  • Package Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6468 $58.2120
220+ $0.5313 $116.8860
340+ $0.5140 $174.7600
465+ $0.4978 $231.4770
600+ $0.4816 $288.9600
805+ $0.4320 $347.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,200 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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