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Same model may have multiple batches, images only for reference.
FQP4N60 Real Image
Same model may have multiple batches, images only for reference.

FQP4N60

Part No FQP4N60
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.4A TO-220
Datasheet
FQP4N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 106W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039856-FQP4N60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP4N60 CAD Model

Description

The Fairchild/ON Semiconductor FQP4N60 is a MOSFET belonging to the Discrete Semiconductor Products category.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: FQP4N60
  • Category: Discrete Semiconductor Products
  • Mounting Technology: Through-Hole
  • Power Dissipation (Max): 106W (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 2.2 Ohm @ 2.2A, 10V
  • Product Status: Obsolete (EOL)

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