The FQP4N80C is an 800V N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor). It's designed for high-voltage, high-speed switching applications. This MOSFET is part of Fairchild's Power MOSFET family and offers efficient performance in various power electronics circuits.

Applications:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• High-voltage DC-DC converters
• Electronic Ballasts for Lighting

Features:

• High Voltage: 800V Drain-Source Voltage (VDS)
• Low On-Resistance: RDS(on) = 2.7 Ohms (max) at VGS = 10V
• High Switching Speed: Fast switching performance for efficient operation
• Avalanche Ruggedness: Tested for avalanche breakdown energy
• High Ruggedness
• 100% Avalanche Tested

Benefits:

• Improved Efficiency: Low on-resistance minimizes conduction losses, leading to higher efficiency in power conversion circuits.
• Reliable Performance: High voltage rating and avalanche ruggedness ensure reliable operation in demanding applications.
• Simplified Design: Fast switching speed simplifies the design of high-frequency power circuits.
• Reduced Heat Dissipation: Lower on-resistance results in less heat generation, allowing for smaller heat sinks.
• Enhanced System Reliability: Robust design contributes to overall system reliability and longevity.

Additional Details:

The FQP4N80C uses an advanced planar stripe, DMOS technology. It is available in a TO-220 package. Key specifications include a continuous drain current (ID) of 3.7A, a pulsed drain current (IDM) of 11.1A, and a gate-source voltage (VGS) of ±30V. The total gate charge (Qg) is typically around 12 nC. It is RoHS compliant.