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FQP55N06

Part No FQP55N06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 55A TO-220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 133W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 27.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 040351-FQP55N06
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
Ultra Librarian 3D Model Ultra Librarian FQP55N06 CAD Model

Description

The Fairchild/ON Semiconductor FQP55N06 is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (Tc=25°C): 55A
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Rds On (Id=27.5A, Vgs=10V): 20 mOhm
  • Package: TO-220-3
  • Popularity: Medium
  • Operating Temperature Range (TJ): -55°C to 175°C
  • Power Dissipation (Max) (Tc): 133W
  • Supply and Demand: Limited
  • Applications: Power Management, Communications and Networking, Computers and Computer Peripherals, Industrial

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9312 $57.9360
75+ $1.5847 $118.8525
115+ $1.5350 $176.5250
160+ $1.4853 $237.6480
205+ $1.4357 $294.3185
270+ $1.2878 $347.7060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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