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Same model may have multiple batches, images only for reference.
FQP8P10 Real Image
Same model may have multiple batches, images only for reference.

FQP8P10

Part No FQP8P10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 8A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 470pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 530 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067445-FQP8P10
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP8P10 CAD Model

Description

The Fairchild/ON Semiconductor FQP8P10 is a P-channel MOSFET transistor.

  • Maximum Power Dissipation: 65W @ 25°C
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 8A @ 25°C
  • Maximum Rds On: 530 mOhm @ 4A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Maximum Input Capacitance: 470pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-220-3

The FQP8P10 is ideal for use in discrete semiconductor products, such as power supplies and motor controls.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6435 $57.9150
220+ $0.5281 $116.1820
340+ $0.5116 $173.9440
470+ $0.4950 $232.6500
605+ $0.4786 $289.5530
810+ $0.4290 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 180 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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