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Same model may have multiple batches, images only for reference.
FQP9N25C Real Image
Same model may have multiple batches, images only for reference.

FQP9N25C

Part No FQP9N25C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8.8A TO-220
Datasheet
FQP9N25C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 710pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 135195-FQP9N25C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP9N25C CAD Model

Description

The Fairchild/ON Semiconductor FQP9N25C is an N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 8.8A @ 25°C
  • Maximum Rds On: 430 mOhm @ 4.4A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 710pF @ 25V
  • Package: TO-220-3
  • Mounting: Through Hole
  • Power Dissipation: 74W (Tc)
  • Designed for: Discrete Semiconductor Products
  • Supply and Demand: Limited

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Quantity Unit Price Ext. Price
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440+ $0.2645 $116.3800
680+ $0.2564 $174.3520
935+ $0.2483 $232.1605
1,210+ $0.2391 $289.3110
1,615+ $0.2148 $346.9020
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