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Same model may have multiple batches, images only for reference.
FQPF32N12V2 Real Image
Same model may have multiple batches, images only for reference.

FQPF32N12V2

Part No FQPF32N12V2
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 32A TO-220F
Datasheet
FQPF32N12V2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 1860pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039920-FQPF32N12V2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQPF32N12V2 CAD Model

Description

The FQPF32N12V2 is an N-channel MOSFET from Fairchild/ON Semiconductor.

  • Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 120V
  • Continuous Drain Current @ 25°C: 32A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 50 mOhm @ 16A, 10V
  • Mounting: Through Hole
  • Package: TO-220F
  • Maximum Input Capacitance: 1860pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1229 $63.6870
70+ $1.7417 $121.9190
105+ $1.6875 $177.1875
145+ $1.6332 $236.8140
185+ $1.5789 $292.0965
245+ $1.4160 $346.9200
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Availability: 85,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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