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Same model may have multiple batches, images only for reference.
FQPF3N25 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQPF3N25

Part No FQPF3N25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 2.3A TO-220F
Datasheet
FQPF3N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 5.2nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 27W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 1.15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039922-FQPF3N25
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF3N25 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a powerful electronic component designed for various applications.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 2.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 5.2nC @ 10V
  • Maximum Input Capacitance: 170pF @ 25V
  • Maximum Rds On @ Id,Vgs: 2.2 Ohm @ 1.15A, 10V
  • Case: TO-220F
  • Dimension: TO-220-3 Full Pack
  • Maximum Power: 27W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Package Quantity: 1k pcs

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