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Same model may have multiple batches, images only for reference.
FQPF3N80C Real Image
Same model may have multiple batches, images only for reference.

FQPF3N80C

Part No FQPF3N80C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3A TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 16.5nC @ 10V
Max Input Capacitance 705pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 4.8 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 001245-FQPF3N80C
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF3N80C CAD Model

Description

The Fairchild/ON Semiconductor FQPF3N80C is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 3A (Tc) @ 25°C
  • Power Dissipation: 39W (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 16.5nC @ 10V
  • Maximum Input Capacitance: 705pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 4.8 Ohm @ 1.5A, 10V
  • Package: Tube/Rail (1k pcs)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6494 $57.7290
75+ $1.3534 $101.5050
115+ $1.3111 $150.7765
160+ $1.2688 $203.0080
205+ $1.2265 $251.4325
275+ $1.0996 $302.3900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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