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FQPF4N20

Part No FQPF4N20
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 2.8A TO-220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 6.5nC @ 10V
Max Input Capacitance 220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 27W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 1.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039932-FQPF4N20
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF4N20 CAD Model

Description

The Fairchild/ON Semiconductor FQPF4N20 is an N-channel MOSFET with a maximum drain-source breakdown voltage of 200V and a continuous drain current of 2.8A @ 25°C.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 2.8A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 6.5nC @ 10V
  • Maximum Input Capacitance: 220pF @ 25V
  • Maximum Rds On: 1.4 Ohm @ 1.4A, 10V
  • Power Dissipation: 27W (Tc)
  • Drive Voltage: 10V
  • Package: TO-220F
  • Mounting Type: Through Hole
  • Operating Temperature Range: -55°C to 150°C
  • Popularity: Medium
  • Package Contents: Tube/Rail
  • Dimension: TO-220-3 Full Pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4990 $59.8800
285+ $0.4095 $116.7075
440+ $0.3966 $174.5040
605+ $0.3839 $232.2595
780+ $0.3711 $289.4580
1,045+ $0.3326 $347.5670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
In Stock: 4,000 pieces Factory Stock: 4,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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