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Same model may have multiple batches, images only for reference.
FQPF5N50CF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQPF5N50CF

Part No FQPF5N50CF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A TO-220F
Datasheet
FQPF5N50CF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 625pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 1.55 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 067466-FQPF5N50CF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF5N50CF CAD Model

Description

The Fairchild/ON Semiconductor 067466-FQPF5N50CF is a MOSFET technology electronic component.

  • Polarity: N-Channel
  • Power Dissipation: 38W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete(EOL)
  • Case/Package: TO-220F
  • Dimension: TO-220-3 Full Pack
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 24nC @ 10V
  • Maximum Input Capacitance: 625pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 1.55 Ohm @ 2.5A, 10V

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