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Same model may have multiple batches, images only for reference.
FQPF70N10 Real Image
Same model may have multiple batches, images only for reference.

FQPF70N10

Part No FQPF70N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3300pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 62W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 17.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 067470-FQPF70N10
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF70N10 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is an N-channel power transistor with a drain-source breakdown voltage of 100V.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Package: TO-220F
  • Continuous Drain Current (25°C): 35A
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 3300pF @ 25V
  • Maximum Rds On (Id, Vgs): 23 mOhm @ 17.5A, 10V
  • Drive Voltage: 10V
  • Status: Active
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.7146 $54.0022
16+ $6.3300 $101.2800
25+ $6.1322 $153.3050
34+ $5.9344 $201.7696
44+ $5.7365 $252.4060
59+ $5.1431 $303.4429
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Availability: 10,004 pieces
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