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Same model may have multiple batches, images only for reference.
FQPF7N65C Real Image
Same model may have multiple batches, images only for reference.

FQPF7N65C

Part No FQPF7N65C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A TO-220F
Datasheet
FQPF7N65C Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1245pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-3 (Y-Forming)
Dimension TO-220-3 Full Pack, Formed Leads
Win Source Part Number 092770-FQPF7N65C
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF7N65C CAD Model

Description

The Fairchild/ON Semiconductor FQPF7N65C is an N-Channel MOSFET transistor used in various applications.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current (at 25°C): 7A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Input Capacitance: 1245pF @ 25V
  • Maximum Rds On (at Id,Vgs): 1.4 Ohm @ 3.5A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: TO-220F-3 (Y-Forming)
  • Leads: Formed Leads
  • Supply and Demand Status: Limited
  • Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7463 $52.3890
70+ $1.4329 $100.3030
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2986 $253.2270
260+ $1.1642 $302.6920
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Availability: 1,114 pieces
MOQ: 30 pcs
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