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FQPF8N80CYDTU

Part No FQPF8N80CYDTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 8A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 59W (Tc)
Maximum Rds On at Id,Vgs 1.55 Ohm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-3 (Y-Forming)
Dimension TO-220-3 Full Pack, Formed Leads
Win Source Part Number 204317-FQPF8N80CYDTU
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQPF8N80CYDTU CAD Model

Description

The Fairchild/ON Semiconductor FQPF8N80CYDTU is a medium-popularity N-channel MOSFET with limited supply and demand status.

  • Maximum Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current (at 25°C): 8A
  • Package: TO-220F-3 (Y-Forming)
  • Leads: Formed Leads
  • Gate-Source Threshold Voltage: 5V
  • Maximum Gate-Source Voltage: ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3243 $59.5935
110+ $1.0866 $119.5260
165+ $1.0527 $173.6955
230+ $1.0187 $234.3010
295+ $0.9848 $290.5160
395+ $0.8829 $348.7455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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