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Same model may have multiple batches, images only for reference.
FQPF9N50CT Real Image
Same model may have multiple batches, images only for reference.

FQPF9N50CT

Part No FQPF9N50CT
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 9A TO-220F
Datasheet
FQPF9N50CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1030pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 44W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039962-FQPF9N50CT
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF9N50CT CAD Model

Description

The Fairchild/ON Semiconductor FQPF9N50CT is a MOSFET technology-based product that belongs to the discrete semiconductor products category.

  • Status: Obsolete (EOL)
  • Package: TO-220F
  • Mounting: Through-hole
  • Polarity: N-Channel
  • Power Dissipation: 44W (Tc)
  • Continuous Drain Current: 9A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 1030pF @ 25V
  • Maximum Rds On @ Id, Vgs: 800 mOhm @ 4.5A, 10V
  • Supply and Demand Status: Limited

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