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Same model may have multiple batches, images only for reference.
FQU2N100TU Real Image
Same model may have multiple batches, images only for reference.

FQU2N100TU

Part No FQU2N100TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 1.6A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15.5nC @ 10V
Max Input Capacitance 520pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 9 Ohm @ 800mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 204321-FQU2N100TU
Popularity Medium
Supply and Demand Status Limited
Quantity per package 5,040
Ultra Librarian 3D Model Ultra Librarian FQU2N100TU CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a through-hole discrete semiconductor product.

  • Popularity: Medium
  • Supply and Demand: Limited
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 1.6A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 9 Ohm @ 800mA, 10V
  • Maximum Gate Charge: 15.5nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9390 $61.0350
150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,605 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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