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FQU3N40TU

Part No FQU3N40TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 2A IPAK
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 7.5nC @ 10V
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 3.4 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 204323-FQU3N40TU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 70
Ultra Librarian 3D Model Ultra Librarian FQU3N40TU CAD Model

Description

The FQU3N40TU is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It is available in a Through Hole mounting and comes in an I-Pak package. The MOSFET has a Drain-Source Breakdown Voltage of 400V and a Continuous Drain Current of 2A (Tc) at 25°C.

  • Polarity: N-Channel
  • Mounting Type: Through Hole
  • Package: I-Pak
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 2A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge (Max): 7.5nC @ 10V
  • Applications: Power Management, Motor Drive & Control, Audio
  • Power Dissipation: 2.5W (Ta), 30W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package Quantity: 70

Now obsolete (EOL) with medium popularity and balanced supply/demand.

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