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Same model may have multiple batches, images only for reference.
HGT1S3N60A4DS9A Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HGT1S3N60A4DS9A

Part No HGT1S3N60A4DS9A
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 17A 70W D2PAK
Datasheet
HGT1S3N60A4DS9A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 17A
Pulsed Collector Current 40A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 3A
Maximum Power Dissipation 70W
Total Switching Energy(Ets) 37μJ (on), 25μJ (off)
Input Type Standard
Gate Charge 21nC
Turn-on and Turn-off delay time 6ns/73ns
Testing Conditions 390V, 3A, 50 Ohm, 15V
Reverse Recovery Time (trr) 29ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263AB
Win Source Part Number 1043304-HGT1S3N60A4DS9A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HGT1S3N60A4DS9A CAD Model

Description

The Fairchild/ON Semiconductor HGT1S3N60A4DS9A is an obsolete (EOL) IGBT that has a maximum collector-emitter breakdown voltage of 600V and a maximum power dissipation of 70W.

  • Pulsed Collector Current: 40A
  • Collector-Emitter Saturation Voltage (Max): 2.7V @ 15V, 3A
  • Reverse Recovery Time (trr): 29ns
  • Gate Charge: 21nC
  • Mounting: Surface mounted
  • Case/Package: TO-263AB
  • Supply and Demand Status: Sufficient
  • Category: Discrete semiconductor products

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