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HGT1S7N60A4DS9A

Part No HGT1S7N60A4DS9A
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT, 34A, 600V, N-CHANNEL
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 34 A
Current - Collector Pulsed (Icm) 56 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Power - Max 125 W
Switching Energy 120µJ (on), 60µJ (off)
Input Type Standard
Gate Charge 60 nC
Td (on/off) @ 25°C 11ns/100ns
Test Condition 390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr) 34 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 145268-HGT1S7N60A4DS9A
Ultra Librarian 3D Model Ultra Librarian HGT1S7N60A4DS9A CAD Model

Description

The 145268-HGT1S7N60A4DS9A is a single IGBT transistor designed for use in discrete semiconductor products. It is housed in a TO-263AB package and features a maximum power of 125W. The reverse recovery time (trr) is 34ns, and the voltage collector-emitter breakdown (Max) is 600V. The maximum collector current (Ic) is 34A, and the maximum collector pulsed (Icm) is 56A. With a compact design and reliable performance, this IGBT transistor is suitable for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,598 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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