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Same model may have multiple batches, images only for reference.
HUF75321D3ST Real Image
Same model may have multiple batches, images only for reference.

HUF75321D3ST

Part No HUF75321D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 20A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 20V
Max Input Capacitance 680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017076-HUF75321D3ST
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian HUF75321D3ST CAD Model

Description

The HUF75321D3ST is an N-channel MOSFET designed for high power applications.

  • Maximum Power Dissipation: 93W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 20A (Tc)
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Mounting: SMD (SMT)
  • Package: TO-252AA
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On: 36 mOhm at 20A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Quantity: 2,500 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6139 $58.3205
230+ $0.5038 $115.8740
360+ $0.4880 $175.6800
490+ $0.4723 $231.4270
635+ $0.4566 $289.9410
850+ $0.4093 $347.9050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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