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HUF75343S3ST

Part No HUF75343S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 205nC @ 20V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040527-HUF75343S3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75343S3ST CAD Model

Description

The Fairchild/ON Semiconductor 040527-HUF75343S3ST is an N-channel MOSFET discrete semiconductor product with a drain-source breakdown voltage of 55V and a continuous drain current of 75A at 25°C. It is mounted using surface mount technology (SMT) and is packaged in a D2PAK (TO-263AB) case.

  • Maximum Power Dissipation: 270W (Tc)
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Maximum Gate Charge: 205nC at 20V
  • Maximum Input Capacitance: 3000pF at 25V

The component is in the discrete semiconductor products category and has a medium popularity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2167 $60.8350
120+ $0.9984 $119.8080
180+ $0.9672 $174.0960
250+ $0.9360 $234.0000
320+ $0.9048 $289.5360
430+ $0.8112 $348.8160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,430 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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